Computational framework decomposing the anomalous ~1000 mAh/g reversible capacity into four distinct storage mechanisms with size-dependent thermodynamic modeling.
This framework resolves the mystery by demonstrating that four concurrent storage mechanisms -- alloying, partially reversible conversion, rGO defect storage, and interfacial capacitive storage -- synergistically produce the observed excess capacity. A critical nanocrystal radius of ~3 nm separates reversible and irreversible conversion regimes.
| Radius (nm) | E_conv (V) | f_surf | f_rev |
|---|---|---|---|
| 0.5 | 2.006 | 1.000 | 0.898 |
| 1.0 | 1.803 | 0.854 | 0.894 |
| 1.5 | 1.735 | 0.680 | 0.879 |
| 2.0 | 1.702 | 0.556 | 0.832 |
| 2.5 | 1.681 | 0.468 | 0.700 |
| 3.0 | 1.668 | 0.403 | 0.450 |
| 5.0 | 1.641 | 0.258 | 0.006 |
| 10.0 | 1.620 | 0.136 | <0.001 |
| r (nm) | Alloy | Conv. | rGO | Iface. | Total |
|---|---|---|---|---|---|
| 1.0 | 548 | 445 | 135 | 200 | 1328 |
| 2.0 | 548 | 414 | 135 | 200 | 1297 |
| 2.5 | 548 | 348 | 135 | 200 | 1231 |
| 3.0 | 548 | 224 | 135 | 200 | 1107 |
| 5.0 | 548 | 3 | 135 | 200 | 886 |
Size-independent baseline. Six two-phase Li-Sn plateaus at 0.28-0.73 V.
At 2.5 nm. Primary source of excess capacity. Enabled by nanoscale diffusion.
Constant contribution from defect sites, functional groups, and edges on rGO scaffold.
Capacitive storage at SnO2-rGO interface. Scales with specific surface area.